Transistor count

The transistor count is the number of transistors on an integrated circuit. It typically refers to the number of MOSFETs on an IC chip, as all modern ICs use MOSFETs. It is the most common measure of IC complexity. The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.
, the largest transistor count in a commercially available microprocessor is 39.54billion MOSFETs, in AMD's Zen 2 based Epyc Rome, which is a 3D integrated circuit fabricated using TSMC's 7 nm FinFET semiconductor manufacturing process., the highest transistor count in a graphics processing unit is Nvidia's GA100 Ampere with 54billion MOSFETs, manufactured using TSMC's 7 nm process., the highest transistor count in any IC chip is Samsung's 1TB eUFS V-NAND flash memory chip, with 2trillion floating-gate MOSFETs. As of 2019, the highest transistor count in a non-memory chip is a deep learning engine called the Wafer Scale Engine by Cerebras, using a special design to route around any non-functional core on the device; it has 1.2trillion MOSFETs, manufactured using TSMC's 16 nm FinFET process.
In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count as of 2016 is the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors." To compare, the smallest computer, as of 2018 dwarfed by a grain of rice, has on the order of 100,000 transistors, and the one, fully programmable, with the fewest transistors ever has 130 transistors or fewer.
In terms of the total number of transistors in existence, it has been estimated that a total of 13sextillion MOSFETs have been manufactured worldwide between 1960 and 2018, accounting for at least 99.9% of all transistors. This makes the MOSFET the most widely manufactured device in history.

Transistor count

Among the earliest products to use transistors were portable transistor radios, introduced in 1954, which typically used 4 to 8 transistors, often advertising the number on the radio's case. However, early junction transistors were relatively bulky devices that were difficult to manufacture on a mass-production basis, limiting the transistor counts and restricting their usage to a number of specialised applications.
The MOSFET, invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. The MOSFET made it possible to build high-density integrated circuits, enabling Moore's law and very large-scale integration. Atalla first proposed the concept of the MOS integrated circuit chip in 1960, followed by Kahng in 1961, both noting that the MOSFET's ease of fabrication made it useful for integrated circuits. The earliest experimental MOS IC to be demonstrated was a 16-transistor chip built by Fred Heiman and Steven Hofstein at RCA Laboratories in 1962. Further large-scale integration was made possible with an improvement in MOSFET semiconductor device fabrication, the CMOS process, developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963.

Microprocessors

A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.
The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors. The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor. It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor. It was made possible with an improvement in MOSFET design, MOS silicon-gate technology, developed in 1968 at Fairchild Semiconductor by Federico Faggin, who went on to use MOS SGT technology to develop the 4004 with Marcian Hoff, Stanley Mazor and Masatoshi Shima at Intel.
All chips over e.g. a million transistors have much memory, usually cache memories in level 1 and 2 or more levels, accounting for most transistors on microprocessors in modern times, where large caches have become the norm. The level 1 caches of the Pentium Pro die accounted for over 14% of its transistors, while the much larger L2 cache was on a separate die, but on-package, so it's not included in the transistor count. Later chips included more levels, L2 or even L3 on-chip. The last DEC Alpha chip made has 90% of it for cache.
While Intel's i960CA small cache of 1 KB, at about 50,000 transistors, isn't a big part of the chip, it alone would have been very large in early microprocessors. In the ARM 3 chip, with 4 KB, the cache was over 63% of the chip, and in the Intel 80486 its larger cache is only over a third of it because the rest of the chip is more complex. So cache memories are the largest factor, except for in early chips with smaller caches or even earlier chips with no cache at all. Then the inherent complexity, e.g. number of instructions, is the dominant factor, more than e.g. the memory the registers of the chip represent.

Processor	MOS transistor count	Date of introduction	Designer	MOS process	Area
MP944		1970	Garrett AiResearch
Intel 4004	2,250	1971	Intel	10,000 nm	12 mm²
TMX 1795	3,078	1971	Texas Instruments	? nm	30 mm²
Intel 8008	3,500	1972	Intel	10,000 nm	14 mm²
NEC μCOM-4	2,500	1973	NEC	7,500 nm
Toshiba TLCS-12	11,000+	1973	Toshiba	6,000 nm	32 mm²
Intel 4040	3,000	1974	Intel	10,000 nm	12 mm²
Motorola 6800	4,100	1974	Motorola	6,000 nm	16 mm²
Intel 8080	6,000	1974	Intel	6,000 nm	20 mm²
TMS 1000	8,000	1974	Texas Instruments	8,000 nm	11 mm²
MOS Technology 6502	4,528	1975	MOS Technology	8,000 nm	21 mm²
Intersil IM6100	4,000	1975	Intersil
CDP 1801	5,000	1975	RCA
RCA 1802	5,000	1976	RCA	5,000 nm	27 mm²
Zilog Z80	8,500	1976	Zilog	4,000 nm	18 mm²
Intel 8085	6,500	1976	Intel	3,000 nm	20 mm²
TMS9900	8,000	1976	Texas Instruments
Motorola MC14500B		1977	Motorola
Bellmac-8	7,000	1977	Bell Labs	5,000 nm
Motorola 6809	9,000	1978	Motorola	5,000 nm	21 mm²
Intel 8086	29,000	1978	Intel	3,000 nm	33 mm²
Zilog Z8000	17,500	1979	Zilog
Intel 8088	29,000	1979	Intel	3,000 nm	33 mm²
Motorola 68000	68,000	1979	Motorola	3,500 nm	44 mm²
Intel 8051	50,000	1980	Intel
WDC 65C02	11,500	1981	WDC	3,000 nm	6 mm²
ROMP	45,000	1981	IBM	2,000 nm
Intel 80186	55,000	1982	Intel	3,000 nm	60 mm²
Intel 80286	134,000	1982	Intel	1,500 nm	49 mm²
WDC 65C816	22,000	1983	WDC	3,000 nm	9 mm²
NEC V20	63,000	1984	NEC
Motorola 68020	190,000	1984	Motorola	2,000 nm	85 mm²
Intel 80386	275,000	1985	Intel	1,500 nm	104 mm²
ARM 1	25,000	1985	Acorn	3,000 nm	50 mm²
Novix NC4016	16,000	1985	Harris Corporation	3,000 nm
SPARC MB86900	110,000	1986	Fujitsu	1,200 nm
NEC V60	375,000	1986	NEC	1,500 nm
ARM 2	27,000	1986	Acorn	2,000 nm	30.25 mm²
Z80000	91,000	1986	Zilog
NEC V70	385,000	1987	NEC	1,500 nm
Hitachi Gmicro/200	730,000	1987	Hitachi	1,000 nm
Motorola 68030	273,000	1987	Motorola	800 nm	102 mm²
TI Explorer's 32-bit Lisp machine chip	553,000	1987	Texas Instruments	2,000 nm
DEC WRL MultiTitan	180,000	1988	DEC WRL	1,500 nm	61 mm²
Intel i960	250,000	1988	Intel	1,500 nm
Intel i960CA	600,000	1989	Intel	800 nm	143 mm²
Intel i860	1,000,000	1989	Intel
Intel 80486	1,180,235	1989	Intel	1000 nm	173 mm²
ARM 3	310,000	1989	Acorn	1,500 nm	87 mm²
Motorola 68040	1,200,000	1990	Motorola	650 nm	152 mm²
R4000	1,350,000	1991	MIPS	1,000 nm	213 mm²
ARM 6	35,000	1991	ARM	800 nm
Hitachi SH-1	600,000	1992	Hitachi	800 nm	10 mm²
Intel i960CF	900,000	1992	Intel		125 mm²
DEC Alpha 21064	1,680,000	1992	DEC	750 nm	233.52 mm²
Hitachi HARP-1	2,800,000	1993	Hitachi	500 nm	267 mm²
Pentium	3,100,000	1993	Intel	800 nm	294 mm²
ARM700	578,977	1994	ARM	700 nm	68.51 mm²
MuP21	7,000	1994	Offete Enterprises	1200 nm
Motorola 68060	2,500,000	1994	Motorola	600 nm	218 mm²
SA-110	2,500,000	1995	Acorn/DEC/Apple	350 nm	50 mm²
Pentium Pro	5,500,000	1995	Intel	500 nm	307 mm²
AMD K5	4,300,000	1996	AMD	500 nm	251 mm²
Hitachi SH-4	10,000,000	1997	Hitachi	200 nm	42 mm²
Pentium II Klamath	7,500,000	1997	Intel	350 nm	195 mm²
AMD K6	8,800,000	1997	AMD	350 nm	162 mm²
F21	15,000	1997	Offete Enterprises
AVR	140,000	1997	Nordic VLSI/Atmel
Pentium II Deschutes	7,500,000	1998	Intel	250 nm	113 mm²
ARM 9TDMI	111,000	1999	Acorn	350 nm	4.8 mm²
Pentium III Katmai	9,500,000	1999	Intel	250 nm	128 mm²
Emotion Engine	13,500,000	1999	Sony/Toshiba	180 nm	240 mm²
Pentium II Mobile Dixon	27,400,000	1999	Intel	180 nm	180 mm²
AMD K6-III	21,300,000	1999	AMD	250 nm	118 mm²
AMD K7	22,000,000	1999	AMD	250 nm	184 mm²
Gekko	21,000,000	2000	IBM/Nintendo	180 nm	43 mm²
Pentium III Coppermine	21,000,000	2000	Intel	180 nm	80 mm²
Pentium 4 Willamette	42,000,000	2000	Intel	180 nm	217 mm²
SPARC64 V	191,000,000	2001	Fujitsu	130 nm	290 mm²
Pentium III Tualatin	45,000,000	2001	Intel	130 nm	81 mm²
Pentium 4 Northwood	55,000,000	2002	Intel	130 nm	145 mm²
Itanium 2 McKinley	220,000,000	2002	Intel	180 nm	421 mm²
DEC Alpha 21364	152,000,000	2003	DEC	180 nm	397 mm²
Barton	54,300,000	2003	AMD	130 nm	101 mm²
AMD K8	105,900,000	2003	AMD	130 nm	193 mm²
Itanium 2 Madison 6M	410,000,000	2003	Intel	130 nm	374 mm²
Pentium 4 Prescott	112,000,000	2004	Intel	90 nm	110 mm²
SPARC64 V+	400,000,000	2004	Fujitsu	90 nm	294 mm²
Itanium 2	592,000,000	2004	Intel	130 nm	432 mm²
Pentium 4 Prescott-2M	169,000,000	2005	Intel	90 nm	143 mm²
Pentium D Smithfield	228,000,000	2005	Intel	90 nm	206 mm²
Xenon	165,000,000	2005	IBM	90 nm
Cell	250,000,000	2005	Sony/IBM/Toshiba	90 nm	221 mm²
Pentium 4 Cedar Mill	184,000,000	2006	Intel	65 nm	90 mm²
Pentium D Presler	362,000,000	2006	Intel	65 nm	162 mm²
Core 2 Duo Conroe	291,000,000	2006	Intel	65 nm	143 mm²
Dual-core Itanium 2	1,700,000,000	2006	Intel	90 nm	596 mm²
AMD K10 quad-core 2M L3	463,000,000	2007	AMD	65 nm	283 mm²
ARM Cortex-A9	26,000,000	2007	ARM	45 nm	31 mm²
Core 2 Duo Wolfdale	411,000,000	2007	Intel	45 nm	107 mm²
POWER6	789,000,000	2007	IBM	65 nm	341 mm²
Core 2 Duo Allendale	169,000,000	2007	Intel	65 nm	111 mm²
Uniphier	250,000,000	2007	Matsushita	45 nm
SPARC64 VI	540,000,000	2007	Fujitsu	90 nm	421 mm²
Core 2 Duo Wolfdale 3M	230,000,000	2008	Intel	45 nm	83 mm²
Core i7	731,000,000	2008	Intel	45 nm	263 mm²
AMD K10 quad-core 6M L3	758,000,000	2008	AMD	45 nm	258 mm²
Atom	47,000,000	2008	Intel	45 nm	24 mm²
SPARC64 VII	600,000,000	2008	Fujitsu	65 nm	445 mm²
Six-core Xeon 7400	1,900,000,000	2008	Intel	45 nm	503 mm²
Six-core Opteron 2400	904,000,000	2009	AMD	45 nm	346 mm²
SPARC64 VIIIfx	760,000,000	2009	Fujitsu	45 nm	513 mm²
16-core SPARC T3	1,000,000,000	2010	Sun/Oracle	40 nm	377 mm²
Six-core Core i7	1,170,000,000	2010	Intel	32 nm	240 mm²
8-core POWER7 32M L3	1,200,000,000	2010	IBM	45 nm	567 mm²
Quad-core z196	1,400,000,000	2010	IBM	45 nm	512 mm²
Quad-core Itanium Tukwila	2,000,000,000	2010	Intel	65 nm	699 mm²
8-core Xeon Nehalem-EX	2,300,000,000	2010	Intel	45 nm	684 mm²
SPARC64 IXfx	1,870,000,000	2011	Fujitsu	40 nm	484 mm²
Quad-core + GPU Core i7	1,160,000,000	2011	Intel	32 nm	216 mm²
Six-core Core i7/8-core Xeon E5	2,270,000,000	2011	Intel	32 nm	434 mm²
10-core Xeon Westmere-EX	2,600,000,000	2011	Intel	32 nm	512 mm²
Atom "Medfield"	432,000,000	2012	Intel	32 nm	64 mm²
SPARC64 X	2,990,000,000	2012	Fujitsu	28 nm	600 mm²
8-core AMD Bulldozer	1,200,000,000	2012	AMD	32 nm	315 mm²
Quad-core + GPU AMD Trinity	1,303,000,000	2012	AMD	32 nm	246 mm²
Quad-core + GPU Core i7 Ivy Bridge	1,400,000,000	2012	Intel	22 nm	160 mm²
8-core POWER7+	2,100,000,000	2012	IBM	32 nm	567 mm²
Six-core zEC12	2,750,000,000	2012	IBM	32 nm	597 mm²
8-core Itanium Poulson	3,100,000,000	2012	Intel	32 nm	544 mm²
61-core Xeon Phi	5,000,000,000	2012	Intel	22 nm	720 mm²
Apple A7	1,000,000,000	2013	Apple	28 nm	102 mm²
Six-core Core i7 Ivy Bridge E	1,860,000,000	2013	Intel	22 nm	256 mm²
12-core POWER8	4,200,000,000	2013	IBM	22 nm	650 mm²
Xbox One main SoC	5,000,000,000	2013	Microsoft/AMD	28 nm	363 mm²
Quad-core + GPU Core i7 Haswell	1,400,000,000	2014	Intel	22 nm	177 mm²
Apple A8	2,000,000,000	2014	Apple	20 nm	89 mm²
8-core Core i7 Haswell-E	2,600,000,000	2014	Intel	22 nm	355 mm²
Apple A8X	3,000,000,000	2014	Apple	20 nm	128 mm²
15-core Xeon Ivy Bridge-EX	4,310,000,000	2014	Intel	22 nm	541 mm²
18-core Xeon Haswell-E5	5,560,000,000	2014	Intel	22 nm	661 mm²
Quad-core + GPU GT2 Core i7 Skylake K	1,750,000,000	2015	Intel	14 nm	122 mm²
Dual-core + GPU Iris Core i7 Broadwell-U	1,900,000,000	2015	Intel	14 nm	133 mm²
Apple A9	2,000,000,000+	2015	Apple	14 nm	96 mm²
Apple A9	2,000,000,000+	2015	Apple	16 nm	104.5 mm²
Apple A9X	3,000,000,000+	2015	Apple	16 nm	143.9 mm²
IBM z13	3,990,000,000	2015	IBM	22 nm	678 mm²
IBM z13 Storage Controller	7,100,000,000	2015	IBM	22 nm	678 mm²
32-core SPARC M7	10,000,000,000	2015	Oracle	20 nm
Qualcomm Snapdragon 835	3,000,000,000	2016	Qualcomm	10 nm	72.3 mm²
10-core Core i7 Broadwell-E	3,200,000,000	2016	Intel	14 nm	246 mm²
Apple A10 Fusion	3,300,000,000	2016	Apple	16 nm	125 mm²
HiSilicon Kirin 960	4,000,000,000	2016	Huawei	16 nm	110.00 mm²
22-core Xeon Broadwell-E5	7,200,000,000	2016	Intel	14 nm	456 mm²
72-core Xeon Phi	8,000,000,000	2016	Intel	14 nm	683 mm²
Zip CPU	1,286 6-LUTs	2016	Gisselquist Technology
Qualcomm Snapdragon 845	5,300,000,000	2017	Qualcomm	10 nm	94 mm²
Qualcomm Snapdragon 850	5,300,000,000	2017	Qualcomm	10 nm	94 mm²
Apple A11 Bionic	4,300,000,000	2017	Apple	10 nm	89.23 mm²
Zeppelin SoC Ryzen	4,800,000,000	2017	AMD	14 nm	192 mm²
Ryzen 5 1600 Ryzen	4,800,000,000	2017	AMD	14 nm	213 mm²
Ryzen 5 1600 X Ryzen	4,800,000,000	2017	AMD	14 nm	213 mm²
IBM z14	6,100,000,000	2017	IBM	14 nm	696 mm²
IBM z14 Storage Controller	9,700,000,000	2017	IBM	14 nm	696 mm²
HiSilicon Kirin 970	5,500,000,000	2017	Huawei	10 nm	96.72 mm²
Xbox One X main SoC	7,000,000,000	2017	Microsoft/AMD	16 nm	360 mm²
28-core Xeon Platinum 8180	8,000,000,000	2017	Intel	14 nm
POWER9	8,000,000,000	2017	IBM	14 nm	695 mm²
Freedom U500 Base Platform Chip RISC-V	250,000,000	2017	SiFive	28 nm	~30 mm²
SPARC64 XII	5,450,000,000	2017	Fujitsu	20 nm	795 mm²
Apple A10X Fusion	4,300,000,000	2017	Apple	10 nm	96.40 mm²
Centriq 2400	18,000,000,000	2017	Qualcomm	10 nm	398 mm²
32-core AMD Epyc	19,200,000,000	2017	AMD	14 nm	768 mm²
Qualcomm Snapdragon 710		2018	Qualcomm	10 nm
Qualcomm Snapdragon 675		2018	Qualcomm	11 nm
Qualcomm Snapdragon 855		2018	Qualcomm	7 nm	73.27 mm²
Qualcomm Snapdragon 8cx / SCX8180	8,500,000,000	2018	Qualcomm	7 nm	112 mm²
Apple A12 Bionic	6,900,000,000	2018	Apple	7 nm	83.27 mm²
HiSilicon Kirin 980	6,900,000,000	2018	Huawei	7 nm	74.13 mm²
HiSilicon Kirin 990 5G	10,300,000,000	2019	Huawei	7 nm	113.31 mm²
HiSilicon Kirin 990 4G	8,000,000,000	2019	Huawei	7 nm	90.00 mm²
HiSilicon Kirin 710	5,500,000,000	2018	Huawei	12 nm
Apple A12X Bionic	10,000,000,000	2018	Apple	7 nm	122 mm²
Apple A13	8,500,000,000	2019	Apple	7 nm	98.48 mm²
Fujitsu A64FX	8,786,000,000	2018	Fujitsu	7 nm
Tegra Xavier SoC	9,000,000,000	2018	Nvidia	12 nm	350 mm²
Samsung Exynos 9820		2019	Samsung	8 nm	127 mm²
AMD Ryzen 7 3700X	5,990,000,000	2019	AMD	7&12 nm	199 mm²
AMD Ryzen 9 3900X	9,890,000,000	2019	AMD	7 & 12 nm	273 mm²
AMD Epyc Rome	39,540,000,000	2019	AMD	7 & 12 nm	1088 mm²
AWS Graviton2	30,000,000,000	2019	Amazon	7 nm

GPUs

A graphics processing unit is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.
The designer refers to the technology company that designs the logic of the integrated circuit chip. The manufacturer refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry. The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.
The random-access memory that comes with GPUs greatly increase the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15billion FinFETs in the GPU in addition to 16GB of HBM2 memory, totaling about 150billion MOSFETs on the graphics card. The following table does not include the memory. For memory transistor counts, see the [|Memory] section below.

Processor	MOS transistor count	Date of introduction	Designer	Manufacturer	MOS process	Area
µPD7220 GDC	40,000	1982	NEC	NEC	5,000 nm
ARTC HD63484	60,000	1984	Hitachi	Hitachi
YM7101 VDP	100,000	1988	Sega	Yamaha
Tom & Jerry	750,000	1993	Flare	IBM
VDP1	1,000,000	1994	Sega	Hitachi	500 nm
Sony GPU	1,000,000	1994	Toshiba	LSI	500 nm
NV1	1,000,000	1995	Nvidia, Sega	SGS	500 nm	90 mm²
Reality Coprocessor	2,600,000	1996	SGI	NEC	350 nm	81 mm²
PowerVR	1,200,000	1996	VideoLogic	NEC	350 nm
Voodoo Graphics	1,000,000	1996	3dfx	TSMC	500 nm
Voodoo Rush	1,000,000	1997	3dfx	TSMC	500 nm
NV3	3,500,000	1997	Nvidia	SGS, TSMC	350 nm	90 mm²
PowerVR2 CLX2	10,000,000	1998	VideoLogic	NEC	250 nm	116 mm²
i740	3,500,000	1998	Intel, Real3D	Real3D	350 nm
Voodoo 2	4,000,000	1998	3dfx	TSMC	350 nm
Voodoo Rush	4,000,000	1998	3dfx	TSMC	350 nm
Riva TNT	7,000,000	1998	Nvidia	TSMC	350 nm
PowerVR2 PMX1	6,000,000	1999	VideoLogic	NEC	250 nm
Rage 128	8,000,000	1999	ATI	TSMC, UMC	250 nm	70 mm²
Voodoo 3	8,100,000	1999	3dfx	TSMC	250 nm
Graphics Synthesizer	43,000,000	1999	Sony, Toshiba	Sony, Toshiba	180 nm	279 mm²
NV5	15,000,000	1999	Nvidia	TSMC	250 nm
NV10	17,000,000	1999	Nvidia	TSMC	220 nm	111 mm²
Voodoo 4	14,000,000	2000	3dfx	TSMC	220 nm
NV11	20,000,000	2000	Nvidia	TSMC	180 nm	65 mm²
NV15	25,000,000	2000	Nvidia	TSMC	180 nm	81 mm²
Voodoo 5	28,000,000	2000	3dfx	TSMC	220 nm
R100	30,000,000	2000	ATI	TSMC	180 nm	97 mm²
Flipper	51,000,000	2000	ArtX	NEC	180 nm	106 mm²
PowerVR3 KYRO	14,000,000	2001	Imagination	ST	250 nm
PowerVR3 KYRO II	15,000,000	2001	Imagination	ST	180 nm
NV2A	60,000,000	2001	Nvidia	TSMC	150 nm
NV20	57,000,000	2001	Nvidia	TSMC	150 nm	128 mm²
R200	60,000,000	2001	ATI	TSMC	150 nm	68 mm²
NV25	63,000,000	2002	Nvidia	TSMC	150 nm	142 mm²
R300	107,000,000	2002	ATI	TSMC	150 nm	218 mm²
R360	117,000,000	2003	ATI	TSMC	150 nm	218 mm²
NV38	135,000,000	2003	Nvidia	TSMC	130 nm	207 mm²
R480	160,000,000	2004	ATI	TSMC	130 nm	297 mm²
NV40	222,000,000	2004	Nvidia	IBM	130 nm	305 mm²
Xenos	232,000,000	2005	ATI	TSMC	90 nm	182 mm²
RSX Reality Synthesizer	300,000,000	2005	Nvidia, Sony	Sony	90 nm	186 mm²
G70	303,000,000	2005	Nvidia	TSMC, Chartered	110 nm	333 mm²
R520	321,000,000	2005	ATI	TSMC	90 nm	288 mm²
R580	384,000,000	2006	ATI	TSMC	90 nm	352 mm²
G80	681,000,000	2006	Nvidia	TSMC	90 nm	480 mm²
G86 Tesla	210,000,000	2007	Nvidia	TSMC	80 nm	127 mm²
G84 Tesla	289,000,000	2007	Nvidia	TSMC	80 nm	169 mm²
R600	700,000,000	2007	ATI	TSMC	80 nm	420 mm²
G92	754,000,000	2007	Nvidia	TSMC, UMC	65 nm	324 mm²
G98 Tesla	210,000,000	2008	Nvidia	TSMC	65 nm	86 mm²
RV710	242,000,000	2008	ATI	TSMC	55 nm	73 mm²
G96 Tesla	314,000,000	2008	Nvidia	TSMC	55 nm	121 mm²
G94 Tesla	505,000,000	2008	Nvidia	TSMC	65 nm	240 mm²
RV730	514,000,000	2008	ATI	TSMC	55 nm	146 mm²
RV670	666,000,000	2008	ATI	TSMC	55 nm	192 mm²
RV770	956,000,000	2008	ATI	TSMC	55 nm	256 mm²
RV790	959,000,000	2008	ATI	TSMC	55 nm	282 mm²
GT200b Tesla	1,400,000,000	2008	Nvidia	TSMC, UMC	55 nm	470 mm²
GT200 Tesla	1,400,000,000	2008	Nvidia	TSMC	65 nm	576 mm²
GT218 Tesla	260,000,000	2009	Nvidia	TSMC	40 nm	57 mm²
GT216 Tesla	486,000,000	2009	Nvidia	TSMC	40 nm	100 mm²
GT215 Tesla	727,000,000	2009	Nvidia	TSMC	40 nm	144 mm²
RV740	826,000,000	2009	ATI	TSMC	40 nm	137 mm²
Juniper RV840	1,040,000,000	2009	ATI	TSMC	40 nm	166 mm²
Cypress RV870	2,154,000,000	2009	ATI	TSMC	40 nm	334 mm²
Cedar RV810	292,000,000	2010	AMD	TSMC	40 nm	59 mm²
Redwood RV830	627,000,000	2010	AMD	TSMC	40 nm	104 mm²
GF106 Fermi	1,170,000,000	2010	Nvidia	TSMC	40 nm	238 mm²
Barts RV940	1,700,000,000	2010	AMD	TSMC	40 nm	255 mm²
Cayman RV970	2,640,000,000	2010	AMD	TSMC	40 nm	389 mm²
GF100 Fermi	3,200,000,000		Nvidia	TSMC	40 nm	526 mm²
GF110 Fermi	3,000,000,000		Nvidia	TSMC	40 nm	520 mm²
GF119 Fermi	292,000,000	2011	Nvidia	TSMC	40 nm	79 mm²
Caicos RV910	370,000,000	2011	AMD	TSMC	40 nm	67 mm²
GF108 Fermi	585,000,000	2011	Nvidia	TSMC	40 nm	116 mm²
Turks RV930	716,000,000	2011	AMD	TSMC	40 nm	118 mm²
GF104 Fermi	1,950,000,000	2011	Nvidia	TSMC	40 nm	332 mm²
Tahiti	4,312,711,873	2011	AMD	TSMC	28 nm	365 mm²
GK107 Kepler	1,270,000,000	2012	Nvidia	TSMC	28 nm	118 mm²
Cape Verde	1,500,000,000	2012	AMD	TSMC	28 nm	123 mm²
GK106 Kepler	2,540,000,000	2012	Nvidia	TSMC	28 nm	221 mm²
Pitcairn	2,800,000,000	2012	AMD	TSMC	28 nm	212 mm²
GK104 Kepler	3,540,000,000	2012	Nvidia	TSMC	28 nm	294 mm²
GK110 Kepler	7,080,000,000	2012	Nvidia	TSMC	28 nm	561 mm²
Oland	1,040,000,000	2013	AMD	TSMC	28 nm	90 mm²
Bonaire	2,080,000,000	2013	AMD	TSMC	28 nm	160 mm²
Durango	5,000,000,000	2013	AMD	TSMC	28 nm	363 mm²
Liverpool	Unknown	2013	AMD	TSMC	28 nm	348 mm²
Hawaii	6,300,000,000	2013	AMD	TSMC	28 nm	438 mm²
GM107 Maxwell	1,870,000,000	2014	Nvidia	TSMC	28 nm	148 mm²
GM206 Maxwell	2,940,000,000	2014	Nvidia	TSMC	28 nm	228 mm²
Tonga	5,000,000,000	2014	AMD	TSMC, GlobalFoundries	28 nm	366 mm²
GM204 Maxwell	5,200,000,000	2014	Nvidia	TSMC	28 nm	398 mm²
GM200 Maxwell	8,000,000,000	2015	Nvidia	TSMC	28 nm	601 mm²
Fiji	8,900,000,000	2015	AMD	TSMC	28 nm	596 mm²
Polaris 11 "Baffin"	3,000,000,000	2016	AMD	Samsung, GlobalFoundries	14 nm	123 mm²
GP108 Pascal	4,400,000,000	2016	Nvidia	TSMC	16 nm	200 mm²
Durango 2	5,000,000,000	2016	AMD	TSMC	16 nm	240 mm²
Neo	5,700,000,000	2016	AMD	TSMC	16 nm	325 mm²
Polaris 10 "Ellesmere"	5,700,000,000	2016	AMD	Samsung, GlobalFoundries	14 nm	232 mm²
GP104 Pascal	7,200,000,000	2016	Nvidia	TSMC	16 nm	314 mm²
GP100 Pascal	15,300,000,000	2016	Nvidia	TSMC, Samsung	16 nm	610 mm²
GP108 Pascal	1,850,000,000	2017	Nvidia	Samsung	14 nm	74 mm²
Polaris 12 "Lexa"	2,200,000,000	2017	AMD	Samsung, GlobalFoundries	14 nm	101 mm²
GP107 Pascal	3,300,000,000	2017	Nvidia	Samsung	14 nm	132 mm²
Scorpio	7,000,000,000	2017	AMD	TSMC	16 nm	359 mm²
GP102 Pascal	11,800,000,000	2017	Nvidia	TSMC, Samsung	16 nm	471 mm²
Vega 10	12,500,000,000	2017	AMD	Samsung, GlobalFoundries	14 nm	484 mm²
GV100 Volta	21,100,000,000	2017	Nvidia	TSMC	12 nm	815 mm²
TU106 Turing	10,800,000,000	2018	Nvidia	TSMC	12 nm	445 mm²
Vega 20	13,230,000,000	2018	AMD	TSMC	7 nm	331 mm²
TU104 Turing	13,600,000,000	2018	Nvidia	TSMC	12 nm	545 mm²
TU102 Turing	18,600,000,000	2018	Nvidia	TSMC	12 nm	754 mm²
TU117 Turing	4,700,000,000	2019	Nvidia	TSMC	12 nm	200 mm²
TU116 Turing	6,600,000,000	2019	Nvidia	TSMC	12 nm	284 mm²
Navi 14	6,400,000,000	2019	AMD	TSMC	7 nm	158 mm²
Navi 10	10,300,000,000	2019	AMD	TSMC	7 nm	251 mm²
GA100 Ampere	54,000,000,000	2020	Nvidia	TSMC	7 nm	826 mm²

FPGA

A field-programmable gate array is an integrated circuit designed to be configured by a customer or a designer after manufacturing.

FPGA	MOS transistor count	Date of introduction	Designer	Manufacturer	MOS process	Area
Virtex	70,000,000	1997	Xilinx
Virtex-E	200,000,000	1998	Xilinx
Virtex-II	350,000,000	2000	Xilinx		130 nm
Virtex-II PRO	430,000,000	2002	Xilinx
Virtex-4	1,000,000,000	2004	Xilinx		90 nm
Virtex-5	1,100,000,000	2006	Xilinx	TSMC	65 nm
Stratix IV	2,500,000,000	2008	Altera	TSMC	40 nm
Stratix V	3,800,000,000	2011	Altera	TSMC	28 nm
Arria 10	5,300,000,000	2014	Altera	TSMC	20 nm
Virtex-7 2000T	6,800,000,000	2011	Xilinx	TSMC	28 nm
Stratix 10 SX 2800	17,000,000,000	TBD	Intel	Intel	14 nm	560 mm²
Virtex-Ultrascale VU440	20,000,000,000	Q1 2015	Xilinx	TSMC	20 nm
Virtex-Ultrascale+ VU19P	35,000,000,000	2020	Xilinx	TSMC	16 nm	900 mm²
Versal VC1902	37,000,000,000	2H 2019	Xilinx	TSMC	7 nm
Stratix 10 GX 10M	43,300,000,000	Q4 2019	Intel	Intel	14 nm	1400 mm²

Memory

is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memory since the 1970s have used MOSFETs, replacing earlier bipolar junction transistors. There are two major types of semiconductor memory, random-access memory and non-volatile memory. In turn, there are two major RAM types, dynamic random-access memory and static random-access memory, as well as two major NVM types, flash memory and read-only memory.
Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not is used to store 1 or 0. For flash memory, the data is stored in floating gate, and the resistance of the transistor is sensed to interpret the data stored. Depending on how fine scale the resistance could be separated, one transistor could store up to 3-bits, meaning eight distinctive level of resistance possible per transistor. However, the fine the scale comes with cost of repeatability therefore reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16 GB flash drive contains roughly 64 billion transistors.
For SRAM chips, six-transistor cells was the standard. DRAM chips during the early 1970s had three-transistor cells, before single-transistor cells became standard since the era of 4Kb DRAM in the mid-1970s. In single-level flash memory, each cell contains one floating-gate MOSFET, whereas multi-level flash contains 2, 3 or 4 bits per transistor.
Flash memory chips are commonly stacked up in layers, up to 128-layer in production, and 136-layer managed, and available in end-user devices up to 69-layer from manufacturers.

Chip name	Capacity	RAM type	Transistor count	Date of introduction	Manufacturer	MOS process	Area
	1-bit	SRAM	6	1963	Fairchild
	1-bit	DRAM	1	1965	Toshiba
	8-bit	SRAM	48	1965	SDS, Signetics
SP95	16-bit	SRAM	80	1965	IBM
TMC3162	16-bit	SRAM	96	1966	Transitron
		SRAM		1966	NEC
	256-bit	DRAM	256	1968	Fairchild
	64-bit	SRAM	384	1968	Fairchild
	144-bit	SRAM	864	1968	NEC
1101	256-bit	SRAM	1,536	1969	Intel	12,000 nm
1102	1 Kb	DRAM	3,072	1970	Intel, Honeywell
1103	1 Kb	DRAM	3,072	1970	Intel	8,000 nm	10 mm²
μPD403	1 Kb	DRAM	3,072	1971	NEC
	2 Kb	DRAM	6,144	1971	General Instrument		12.7 mm²
2102	1 Kb	SRAM	6,144	1972	Intel
	8 Kb	DRAM	8,192	1973	IBM		18.8 mm²
5101	1 Kb	SRAM	6,144	1974	Intel
2116	16 Kb	DRAM	16,384	1975	Intel
2114	4 Kb	SRAM	24,576	1976	Intel
	4 Kb	SRAM	24,576	1977	Toshiba
	64 Kb	DRAM	65,536	1977	NTT		35.4 mm²
	64 Kb	DRAM	65,536	1979	Siemens		25.2 mm²
	16 Kb	SRAM	98,304	1980	Hitachi, Toshiba
	256 Kb	DRAM	262,144	1980	NEC	1,500 nm	41.6 mm²
	256 Kb	DRAM	262,144	1980	NTT	1,000 nm	34.4 mm²
	64 Kb	SRAM	393,216	1980	Matsushita
	288 Kb	DRAM	294,912	1981	IBM		25 mm²
	64 Kb	SRAM	393,216	1982	Intel	1,500 nm
	256 Kb	SRAM	1,572,864	1984	Toshiba	1,200 nm
	8 Mb	DRAM	8,388,608		Hitachi
	16 Mb	DRAM	16,777,216	1987	NTT	700 nm	148 mm²
	4 Mb	SRAM	25,165,824	1990	NEC, Toshiba, Hitachi, Mitsubishi
	64 Mb	DRAM	67,108,864	1991	Matsushita, Mitsubishi, Fujitsu, Toshiba	400 nm
KM48SL2000	16 Mb	SDRAM	16,777,216	1992	Samsung
	16 Mb	SRAM	100,663,296	1992	Fujitsu, NEC	400 nm
	256 Mb	DRAM	268,435,456	1993	Hitachi, NEC	250 nm
	1 Gb	DRAM	1,073,741,824		NEC	250 nm
	1 Gb	DRAM	1,073,741,824		Hitachi	160 nm
	1 Gb	SDRAM	1,073,741,824	1996	Mitsubishi	150 nm
	1 Gb	SDRAM	1,073,741,824	1997	Hyundai
	4 Gb	DRAM	1,073,741,824	1997	NEC	150 nm
	4 Gb	DRAM	4,294,967,296	1998	Hyundai
	8 Gb	SDRAM	8,589,934,592		Samsung	50 nm
	16 Gb	SDRAM	17,179,869,184	2008	Samsung	50 nm
	32 Gb	SDRAM	34,359,738,368	2016	Samsung	20 nm
	64 Gb	SDRAM	68,719,476,736	2017	Samsung	20 nm
	128 Gb	SDRAM	137,438,953,472	2018	Samsung	10 nm
		RRAM		2019	Skywater	90 nm

Chip name	Capacity	Flash type	FGMOS transistor count	Date of introduction	Manufacturer	MOS process	Area
	256 Kb	NOR	262,144	1985	Toshiba	2,000 nm
	1 Mb	NOR	1,048,576	1989	Seeq, Intel
	4 Mb	NAND	4,194,304	1989	Toshiba	1,000 nm
	16 Mb	NOR	16,777,216	1991	Mitsubishi	600 nm
DD28F032SA	32 Mb	NOR	33,554,432	1993	Intel		280 mm²
	64 Mb	NOR	67,108,864	1994	NEC	400 nm
	64 Mb	NAND	67,108,864	1996	Hitachi	400 nm
	128 Mb	NAND	134,217,728	1996	Samsung, Hitachi
	256 Mb	NAND	268,435,456	1999	Hitachi, Toshiba	250 nm
	512 Mb	NAND	536,870,912	2000	Toshiba
	1 Gb	2-bit NAND	536,870,912	2001	Samsung
	1 Gb	2-bit NAND	536,870,912	2001	Toshiba, SanDisk	160 nm
	2 Gb	NAND	2,147,483,648	2002	Samsung, Toshiba
	8 Gb	NAND	8,589,934,592	2004	Samsung	60 nm
	16 Gb	NAND	17,179,869,184	2005	Samsung	50 nm
	32 Gb	NAND	34,359,738,368	2006	Samsung	40 nm
THGAM	128 Gb	Stacked NAND	128,000,000,000		Toshiba	56 nm	252 mm²
THGBM	256 Gb	Stacked NAND	256,000,000,000	2008	Toshiba	43 nm	353 mm²
THGBM2	1 Tb	Stacked 4-bit NAND	256,000,000,000	2010	Toshiba	32 nm	374 mm²
KLMCG8GE4A	512 Gb	Stacked 2-bit NAND	256,000,000,000	2011	Samsung		192 mm²
KLUFG8R1EM	4 Tb	Stacked 3-bit V-NAND	1,365,333,333,504	2017	Samsung		150 mm²
eUFS	8 Tb	Stacked 4-bit V-NAND	2,048,000,000,000	2019	Samsung		150 mm²

Chip name	Capacity	ROM type	Transistor count	Date of introduction	Manufacturer	MOS process	Area
		PROM		1956	Arma
	1 Kb	ROM	1,024	1965	General Microelectronics
3301	1 Kb	ROM	1,024	1969	Intel
1702	2 Kb	EPROM	2,048	1971	Intel		15 mm²
	4 Kb	ROM	4,096	1974	AMD, General Instrument
2708	8 Kb	EPROM	8,192	1975	Intel
	2 Kb	EEPROM	2,048	1976	Toshiba
µCOM-43 ROM	16 Kb	PROM	16,000	1977	NEC
2716	16 Kb	EPROM	16,384	1977	Intel
EA8316F	16 Kb	ROM	16,384	1978	Electronic Arrays		436 mm²
2732	32 Kb	EPROM	32,768	1978	Intel
2364	64 Kb	ROM	65,536	1978	Intel
2764	64 Kb	EPROM	65,536	1981	Intel	3,500 nm
27128	128 Kb	EPROM	131,072	1982	Intel
27256	256 Kb	EPROM	262,144	1983	Intel
	256 Kb	EPROM	262,144	1983	Fujitsu
	512 Kb	EPROM	524,288	1984	AMD	1,700 nm
27512	512 Kb	EPROM	524,288	1984	Intel
	1 Mb	EPROM	1,048,576	1984	NEC	1,200 nm
	4 Mb	EPROM	4,194,304	1987	Toshiba	800 nm
	16 Mb	EPROM	16,777,216	1990	NEC	600 nm
	16 Mb	MROM	16,777,216	1995	AKM, Hitachi

Transistor computers

Before transistors were invented, relays were used in early computers. The world's first working programmable, fully automatic digital computer, the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5 Hz. The 1940 Complex Number Computer had fewer than 500 relays, but it was not fully programmable.
The second generation of computers were transistor computers that featured boards filled with discrete transistors and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world. A later version the 1955 machine had a total of 250 junction transistors and 1300 point diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out. The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.
The third generation of computers used integrated circuits. The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" circuits" for about 12,000 transistors plus 32,000 resistors.
The first commercial IC-based computer was the IBM System/360 in 1964. The 1965 12-bit PDP-8 CPU had 1409 transistors and over 10,000 diodes. It was not a microprocessor, as it used discrete transistors on many cards; but later microprocessors, such as the Intersil 6100 reimplemented it, see below.
The next generation of computers were the microcomputers, also known as home computers or personal computers, which used MOS microprocessors, in the 1970s. This list includes early transistorized computers and IC-based computers from the 1950s and 1960s.

Computer	Transistor count	Year	Manufacturer	Notes
Transistor Computer	92	1953	University of Manchester	Point-contact transistors
TRADIC	700	1954	Bell Labs	Point-contact transistors
Transistor Computer	250	1955	University of Manchester	Discrete point-contact transistors
ETL Mark III	130	1956	Electrotechnical Laboratory	Point-contact transistors
Metrovick 950	200	1956	Metropolitan-Vickers	Discrete junction transistors
NEC NEAC-2201	600	1958	NEC	Germanium transistors
Hitachi MARS-1	1,000	1958	Hitachi
IBM 7070	30,000	1958	IBM	Alloy-junction germanium transistors
Matsushita MADIC-I	400	1959	Matsushita	Bipolar transistors
NEC NEAC-2203	2,579	1959	NEC
Toshiba TOSBAC-2100	5,000	1959	Toshiba
IBM 7090	50,000	1959	IBM	Discrete germanium transistors
PDP-1	2,700	1959	Digital Equipment Corporation	Discrete transistors
Mitsubishi MELCOM 1101	3,500	1960	Mitsubishi	Germanium transistors
M18 FADAC	1,600	1960	Autonetics	Discrete transistors
D-17B	1,521	1962	Autonetics	Discrete transistors
NEC NEAC-L2	16,000	1964	NEC	Ge transistors
IBM System/360	?	1964	IBM	Integrated circuits
PDP-8/I	1409	1968	Digital Equipment Corporation	74 series TTL circuits
Apollo Guidance Computer Block II	12,300	1966	Raytheon / MIT Instrumentation Laboratory	4,100 ICs, each containing a 3-transistor, 3-input NOR gate

Logic functions

Transistor count for generic logic functions is based on static CMOS implementation.

Function	Transistor count	Ref
NOT	2
Buffer	4
NAND 2-input	4
NOR 2-input	4
AND 2-input	6
OR 2-input	6
NAND 3-input	6
NOR 3-input	6
XOR 2-input	6
XNOR 2-input	8
MUX 2-input with TG	6
MUX 4-input with TG	18
NOT MUX 2-input	8
MUX 4-input	24
1-bit adder full	28
1-bit adder–subtractor	48
AND-OR-INVERT	6
Latch, D gated	8
Flip-flop, edge triggered dynamic D with reset	12
8-bit multiplier	3,000
16-bit multiplier	9,000
32-bit multiplier	21,000
small-scale integration	2–100
medium-scale integration	100–500
large-scale integration	500–20,000
very-large-scale integration	20,000–1,000,000
ultra-large scale integration	>1,000,000

Parallel systems

Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.
Goodyear MPP: 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.
Brunel University Scape : 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.
Cell Broadband Engine: with 9 cores per chip, had 234 million transistors per chip.

Other devices

Transistor density

The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter. The transistor density usually correlates with the gate length of a semiconductor node, typically measured in nanometers., the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3million transistors per square millimeter.

MOSFET nodes

Node name	Transistor density	Production year	Process	MOSFET	Manufacturer
		1960	20,000 nm	PMOS	Bell Labs
		1960	20,000 nm	NMOS	Bell Labs
		1963		CMOS	Fairchild
		1964		PMOS	General Microelectronics
		1968	20,000 nm	CMOS	RCA
		1969	12,000 nm	PMOS	Intel
		1970	10,000 nm	CMOS	RCA
		1970	8,000 nm	PMOS	Intel
		1971	10,000 nm	PMOS	Intel
		1971		PMOS	General Instrument
		1973		NMOS	Texas Instruments
		1973		NMOS	Mostek
		1973	7,500 nm	NMOS	NEC
		1973	6,000 nm	PMOS	Toshiba
		1976	5,000 nm	NMOS	Hitachi, Intel
		1976	5,000 nm	CMOS	RCA
		1976	4,000 nm	NMOS	Zilog
		1976	3,000 nm	NMOS	Intel
		1977		NMOS	NTT
		1978	3,000 nm	CMOS	Hitachi
		1978	2,500 nm	NMOS	Texas Instruments
		1978	2,000 nm	NMOS	NEC, NTT
		1979		VMOS	Siemens
		1979	1,000 nm	NMOS	NTT
		1980	1,000 nm	NMOS	NTT
		1983	2,000 nm	CMOS	Toshiba
		1983	1,500 nm	CMOS	Intel
		1983	1,200 nm	CMOS	Intel
		1984	800 nm	CMOS	NTT
		1987	700 nm	CMOS	Fujitsu
		1989	600 nm	CMOS	Mitsubishi, NEC, Toshiba
		1989	500 nm	CMOS	Hitachi, Mitsubishi, NEC, Toshiba
		1991	400 nm	CMOS	Matsushita, Mitsubishi, Fujitsu, Toshiba
		1993	350 nm	CMOS	Sony
		1993	250 nm	CMOS	Hitachi, NEC
3LM	32,000	1994	350 nm	CMOS	NEC
		1995	160 nm	CMOS	Hitachi
		1996	150 nm	CMOS	Mitsubishi
TSMC 180nm		1998	180 nm	CMOS	TSMC
CS80		1999	180 nm	CMOS	Fujitsu
		1999	180 nm	CMOS	Intel, Sony, Toshiba
CS85		1999	170 nm	CMOS	Fujitsu
Samsung 140nm		1999	140 nm	CMOS	Samsung
		2001	130 nm	CMOS	Fujitsu, Intel
Samsung 100nm		2001	100 nm	CMOS	Samsung
		2002	90 nm	CMOS	Sony, Toshiba, Samsung
CS100		2003	90 nm	CMOS	Fujitsu
Intel 90nm	1,450,000	2004	90 nm	CMOS	Intel
Samsung 80nm		2004	80 nm	CMOS	Samsung
		2004	65 nm	CMOS	Fujitsu, Toshiba
Samsung 60nm		2004	60 nm	CMOS	Samsung
TSMC 45nm		2004	45 nm	CMOS	TSMC
Elpida 90nm		2005	90 nm	CMOS	Elpida Memory
CS200		2005	65 nm	CMOS	Fujitsu
Samsung 50nm		2005	50 nm	CMOS	Samsung
Intel 65nm	2,080,000	2006	65 nm	CMOS	Intel
Samsung 40nm		2006	40 nm	CMOS	Samsung
Toshiba 56nm		2007	56 nm	CMOS	Toshiba
Matsushita 45nm		2007	45 nm	CMOS	Matsushita
Intel 45nm	3,300,000	2008	45 nm	CMOS	Intel
Toshiba 43nm		2008	43 nm	CMOS	Toshiba
TSMC 40nm		2008	40 nm	CMOS	TSMC
Toshiba 32nm		2009	32 nm	CMOS	Toshiba
Intel 32nm	7,500,000	2010	32 nm	CMOS	Intel
		2010	20 nm	CMOS	Hynix, Samsung
Intel 22nm	15,300,000	2012	22 nm	CMOS	Intel
IMFT 20nm		2012	20 nm	CMOS	IMFT
Toshiba 19nm		2012	19 nm	CMOS	Toshiba
Hynix 16nm		2013	16 nm	FinFET	SK Hynix
TSMC 16nm	28,880,000	2013	16 nm	FinFET	TSMC
Samsung 10nm	51,820,000	2013	10 nm	FinFET	Samsung
Intel 14nm	37,500,000	2014	14 nm	FinFET	Intel
14LP	32,940,000	2015	14 nm	FinFET	Samsung
TSMC 10nm	52,510,000	2016	10 nm	FinFET	TSMC
12LP	36,710,000	2017	12 nm	FinFET	GlobalFoundries, Samsung
N7FF	96,500,000	2017	7 nm	FinFET	TSMC
8LPP	61,180,000	2018	8 nm	FinFET	Samsung
7LPE	95,300,000	2018	7 nm	FinFET	Samsung
Intel 10nm	100,760,000	2018	10 nm	FinFET	Intel
5LPE	126,530,000	2018	5 nm	FinFET	Samsung
N7FF+	113,900,000	2019	7 nm	FinFET	TSMC
CLN5FF	171,300,000	2019	5 nm	FinFET	TSMC
TSMC 3nm			3 nm		TSMC
Samsung 3nm			3 nm	GAAFET	Samsung

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The Crown (TV series) - historical drama web television series about the reign of Queen Elizabeth II, created and principally written by Peter Morgan, and produced by Left Bank Pictures and Sony Pictures Tel...
Friends - American sitcom television series, created by David Crane and Marta Kauffman, which aired on NBC from September 22, 1994, to May 6, 2004, lasting ten seasons. With an ensemble cast sta...
Young Sheldon - spin-off prequel to The Big Bang Theory and begins with the character Sheldon...
Modern Family - American television mockumentary family sitcom created by Christopher Lloyd and Steven Levitan for the American Broadcasting Company. It ran for eleven seasons, from September 23...
Loki (TV series) - upcoming American web television miniseries created for Disney+ by Michael Waldron, based on the Marvel Comics character of the same name. It is set in the Marvel Cinematic Universe, shar...
Game of Thrones - American fantasy drama television series created by David Benioff and D. B. Weiss for HBO. It...
Shameless (American TV series) - American comedy-drama television series developed by John Wells which debuted on Showtime on January 9, 2011. It...