Copper indium gallium selenide


Copper indium gallium selenide is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide and copper gallium selenide. It has a chemical formula of CuInGaSe2 where the value of x can vary from 0 to 1. CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV to about 1.7 eV.

Structure

CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from 1045 °C for x=0 to 805 °C for x=1.

Applications

It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry. In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.